Download Nonclassical Light from Semiconductor Lasers and LEDs by Dr. Jungsang Kim, Dr. Seema Somani, Professor Yoshihisa PDF
By Dr. Jungsang Kim, Dr. Seema Somani, Professor Yoshihisa Yamamoto (auth.)
The quantum statistical homes of the sunshine wave generated in a semiconductor laser or a light-emitting diode (LED) has been a box of excessive study for greater than a decade. This study monograph discusses contemporary examine actions in nonclassical mild new release in keeping with semiconductor units. This quantity consists of 4 significant elements. the 1st discusses the new release of sub-shot-noise mild in macroscopic pn junction light-emitting units, together with semiconductor laser and light-emitting diodes. the second one half discusses the applying of squeezed gentle in high-precision size, together with spectroscopy and interferometry. The 3rd half addresses the Coulomb blockade impression in a mesoscopic pn junction and the new release of unmarried photon states. The final half covers the detection of unmarried photons utilizing a visual mild photon counter.
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Extra info for Nonclassical Light from Semiconductor Lasers and LEDs
Example text
1b. The opposite is true at the dark fringe. Similarly, for Δl = 2Δl0 , Δφ for adjacent modes differs by 2π; thus, the fringes of all the modes overlap again. Therefore, by setting the arm-length difference Δl to c/(2Δf ), we can discriminate between longitudinal modes and measure the longitudinal-modepartition noise with the highest efficiency. 2 shows the experimental setup for measuring the longitudinalmode-partition noise of semiconductor lasers using a Mach–Zehnder interferometer. The laser output was injected into a Mach–Zehnder interferometer with the arm-length difference Δl = c/(2Δf ).
As the driving current increases, the squeezing bandwidth is limited by the carrier recombination lifetime and saturates at ∼560 kHz. For the smallestarea LED, the squeezing bandwidth increases above this value at higher driving currents. This is attributed to the carrier-concentration-dependent radiative lifetime. At higher current densities, the carrier density in the active region increases, and the carrier lifetime is shortened [100]. This results in the increased squeezing bandwidth. 700 600 30 Squeezing Bandwidth (kHz) 800 700 600 500 400 300 200 100 0 10 15 20 25 30 35 40 Squeezing Bandwidth (kHz) Squeezing Bandwidth (kHz) 3.
The signal power is proportional to the square of RL . The total noise in this measurement is the sum of the thermal noise generated at RL and the input noise of the amplifier used. 5) where Iph is the photocurrent, F < 1 characterizes the amount of squeezing, and Samp is the input noise power spectral density of the amplifier. When the amplifier input noise, Samp , is small compared with the thermal noise of the load resistor, the SNR is proportional to the load resistor used. A high impedance front-end design using a 10 kΩ load resistance was used to improve the SNR.